Features: ·Low on-resistance.·Built-in G-S Protection Diode.·Small and Surface Mount Package.·Power switching, DC / DC converter.PinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-source voltage VDSS 30 -30 V Gate-source voltage VGSS ±20 ±20 V Drain Curr...
KP8M10: Features: ·Low on-resistance.·Built-in G-S Protection Diode.·Small and Surface Mount Package.·Power switching, DC / DC converter.PinoutSpecifications Parameter Symbol N-Channel P-Channel Un...
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Parameter | Symbol | N-Channel | P-Channel | Unit |
Drain-source voltage | VDSS | 30 | -30 | V |
Gate-source voltage | VGSS | ±20 | ±20 | V |
Drain Current(DC) | ID | ±7.0 | ±4.5 | A |
Drain Current(Pulse) | IDP | ±28 | ±18 | A |
Source current (Body diode) Continuous | IS | 1.6 | -1.6 | A |
Source current (Body diode) Pulsed * | ISP | 6.4 | -18 | A |
Allowable power Dissipation (TC=25 ) | PD | 2 | W | |
Channel temperature | Tch | 150 | ||
Storage temperature | Tstg | -55 to +150 | ||
Channel to ambient | Rth (ch-a) | 62.5 | /W |