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KMB3D5N40SA

Features: VDSS=40V, ID=3.5ADrain-Source ON ResistanceRDS(ON)=45m (Max.) @ VGS=10VRDS(ON)=62m (Max.) @ VGS=4.5VSuper Hige Dense Cell DesignSpecifications CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS 20 V Drain Curre...

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KMB3D5N40SA: Features: VDSS=40V, ID=3.5ADrain-Source ON ResistanceRDS(ON)=45m (Max.) @ VGS=10VRDS(ON)=62m (Max.) @ VGS=4.5VSuper Hige Dense Cell DesignSpecifications CHARACTERISTIC SYMBOL N-Ch UNIT...

KMB3D5N40SA Data Sheet

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Part Number:
KMB3D5N40SA
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

VDSS=40V, ID=3.5A
Drain-Source ON Resistance
RDS(ON)=45m (Max.) @ VGS=10V
RDS(ON)=62m (Max.) @ VGS=4.5V
Super Hige Dense Cell Design


Specifications

CHARACTERISTIC
SYMBOL
N-Ch
UNIT
Drain-Source Voltage
VDSS
40
V
Gate-Source Voltage
VGSS
20
V
Drain Current DC@Ta=25
ID
3.5
A
DC@Ta=70
2.8
Pulsed
IDP
14
Drain-Source-Diode Forward Current
IS
1.0
A
Drain Power Dissipation Ta=25
PD
1.25

W

Ta=70
0.8
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
Thermal Resistance, Junction to Ambient
RthJA
100
/W
Note > *Surface Mounted on 1 *1 FR4 Board, t 5sec


Description

This KMB3D5N40SA Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Load switch and Back-Light Inverter.




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