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Features: ·VDSS=-30V, ID=-3A·Drain-Source ON ResistanceRDS(ON) =80m (Max.) @ VGS=-10VRDS(ON) =140m (Max.) @ VGS=-4.5V·Super Hige Dense Cell DesignSpecifications CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage VDSS -30 V Gate Source Voltage VGSS ±20 ...

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SeekIC No. : 004386269 Detail

KMB3D0P30SA: Features: ·VDSS=-30V, ID=-3A·Drain-Source ON ResistanceRDS(ON) =80m (Max.) @ VGS=-10VRDS(ON) =140m (Max.) @ VGS=-4.5V·Super Hige Dense Cell DesignSpecifications CHARACTERISTIC SYMBOL PA...

KMB3D0P30SA Data Sheet

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Part Number:: KMB3D0P30SA
Supply Ability:: 5000

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Upload time: 2024/5/18

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Product Details

Description

Features:

·V_DSS=-30V, I_D=-3A
·Drain-Source ON Resistance
R_DS(ON) =80m (Max.) @ V_GS=-10V
R_DS(ON) =140m (Max.) @ V_GS=-4.5V
·Super Hige Dense Cell Design

Specifications

CHARACTERISTIC		SYMBOL	PATING	UNIT
Drain Source Voltage		V_DSS	-30	V
Gate Source Voltage		V_GSS	±20	V
Drain Current	DC@T_A=25	I_D*	-3	A
	DC@T_A=70	I_D*	-2.5
	Pulsed	I_DP	-12
Drain Source Diode Forward Current		I_S	-1.25	A
Drain Power Dissipation	T_A=25	P_D *	1.25	W
Drain Power Dissipation	T_A=70	P_D *	0.8	W
Maximum Junction Temperature		Tj	150
Storage Temperature Range		T_stg	-55 150
Thermal Resistance, Junction to Ambient		R_thJA*	100	/W

Note : *Sorface Mounted on FR4 Board

Description

This KMB3D0P30SA Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.

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KMB3D0P30SA

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