Features: · Fast Access Time 20,25§À(Max.)· Low Power Dissipation -Standby (TTL) : 60§Ì(Max.)CMOS) : 10§Ì(Max.) -Operating KM6164002 - 20 : 240§Ì(Max.)KM6164002 - 25 : 220§Ì(Max.)· Single 5.0V±10% Power Supply· TTL Compatible Inputs and Outputs· I/O Compatible wi...
KM6164002E: Features: · Fast Access Time 20,25§À(Max.)· Low Power Dissipation -Standby (TTL) : 60§Ì(Max.)CMOS) : 10§Ì(Max.) -Operating KM6164002 - 20 : 240§Ì(Max.)KM6164002 - 25 : 22...
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DescriptionThe KM6161002A is a kind of 1,048,576-bit high speed static random access memory organi...
Parameter |
Symbol |
Rating |
Unit | |
Voltage on Any Pin Relative to VSS |
VIN, VOUT |
-0.5 to 7.0 |
V | |
Voltage on VCC Supply Relative to VSS |
VCC |
-0.5 to 7.0 |
V | |
Power Dissipation |
PD |
1.0 |
W | |
Storage Temperature |
TSTG |
-65 to 150 |
||
Operating Temperature | Commercial |
TA |
0 to 70 |
|
Extended |
TA |
-25 to 85 |
||
Industrial |
TA |
-40 to 85 |
*Stresses greater than those listed under "Absolute Maximum Rating" may cause permanent damage to the device. This is a stress ra ting only and functional operation of the device at these at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The KM6164002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The KM6164002 uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The device is fabricated using SAMSUNG's advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM6164002 is packaged in a 400mil 44-pin plastic SOJ.