Features: • Fast Access Time 15, 17, 20ns(Max.)• Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM6164002A - 15 : 210mA(Max.) KM6164002A - 17 : 205mA(Max.) KM6164002A - 20 : 200mA(Max.)• Single 5.0V±10% Power Supply• TTL Compatible Inputs and...
KM6164002AE: Features: • Fast Access Time 15, 17, 20ns(Max.)• Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM6164002A - 15 : 210mA(Max.) KM6164002A - 17 : 205mA(Max....
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DescriptionThe KM6161002A is a kind of 1,048,576-bit high speed static random access memory organi...
Parameter |
Symbol |
Rating |
Unit | |
Voltage on Any Pin Relative to VSS |
VIN, VOUT |
-0.5 to 7.0 |
V | |
Voltage on VCC Supply Relative to VSS |
VCC |
-0.5 to 7.0 |
V | |
Power Dissipation |
PD |
1.0 |
W | |
Storage Temperature |
TSTG |
-65 to 150 |
°C | |
Operating Temperature |
Commercial |
TA |
0 to 70 |
°C |
Extended |
TA |
-25 to 85 |
°C | |
Industrial |
TA |
-40 to 85 |
°C |
The KM6164002A is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The KM6164002A uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control(UB, LB). The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM6164002A is packaged in a 400mil 44-pin plastic SOJ or TSOP(II) forward.