Features: · Voltage Supply: 3.0V~5.5V· Organization - Memory Cell Array : 512K x 8 - Data Register : 32 x 8 bit· Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500ms - Block Erase : 4K Byte in 6ms· 32-Byte Frame Read Operation - Random Access : 15ms(Max.) - Serial Frame Access ...
KM29W040AT: Features: · Voltage Supply: 3.0V~5.5V· Organization - Memory Cell Array : 512K x 8 - Data Register : 32 x 8 bit· Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500ms - Block Eras...
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Features: · Voltage supply : 2.7V~3.6V· Organization - Memory Cell Array : (16M + 512K)bit x 8bit ...
Features: · Voltage Supply : 2.7V ~ 3.6V· Organization - Memory Cell Array : (8M + 256K)bit x 8bit...
Parameter |
Symbol |
Rating |
Unit | |
Voltage on any pin relative to VSS |
VIN |
-0.6 to +7.0 |
V | |
Temperature Under Bias | KM29W040AT |
TBIAS |
-10 to +125 |
|
KM29W040AIT |
-40 to +125 | |||
Storage Temperature |
TSTG |
-65 to +150 |
||
Short Circuit Output Current |
IOS |
5 |
mA |
The KM29W040A is a 512Kx8bit NAND Flash Memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recording. A Program operation programs a 32-byte frame in typically 500ms and an Erase operation erase a 4K-byte block in typically 6ms. Data in a frame can be read out at a burst cycle rate of 120ns/byte. The I/O pins serve as the ports for address and data input/output as well as for command inputs. The on-chip write controller automates the program and erase operations, including program or erase pulse repetition where required, and performs internal verification of cell data.
The KM29W040A is an optimum solution for flash memory application that do not require the high performance levels or capacity of larger density flash memories. These application include data storage in digital Telephone Answering evices(TAD) and other consumer applications that require voice data storage.