DescriptionThe KIC7SZ00FU is designed as one kind of high speed CMOS dual bilateral switch fabricated with silicon gate CMOS technology. This device consists of four independent high speed switches capable of controlling either digital or analog signals while maintaining the CMOS low power dissipa...
KIC7SZ00FU: DescriptionThe KIC7SZ00FU is designed as one kind of high speed CMOS dual bilateral switch fabricated with silicon gate CMOS technology. This device consists of four independent high speed switches ...
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Features: High Output Drive : ±24mA (Typ.) @VCC=3VSuper High Speed Operation : tPD=2.6ns(Typ.) @VC...
Features: `High output drive : ±24mA(min.) @VCC=3V.`High Speed : tpd=3.7ns(typ.) @VCC=5V, 50pF.`Wi...
Features: High Output Drive : 24mA (Typ.) @VCC=3VSuper High Speed Operation : tPD=2.4ns(Typ.) @VCC...
The KIC7SZ00FU is designed as one kind of high speed CMOS dual bilateral switch fabricated with silicon gate CMOS technology. This device consists of four independent high speed switches capable of controlling either digital or analog signals while maintaining the CMOS low power dissipation. Control input (C) is provided to control the switch.
Features of the KIC7SZ00FU are:(1)5 V tolerant function;(2)high output driver: +/- 24 mA at Vcc= 3 V;(3)operation voltage range: Vcc(opr) = 1.8 to 5.5 V;(4)supply voltage data retention: Vcc= 1.5 to 5.5 V.
The absolute maximum ratings of the KIC7SZ00FU can be summarized as:(1)supply voltage range: -0.5 to 6 V;(2)DC input voltage: -0.5 to 6 V;(3)DC output voltage: -0.5 to 6 V;(4)input diode current: +/- 20 mA;(5)output diode current: +/-20 mA;(6)DC output current: +/-50 mA;(7)DC Vcc / ground current: +/-50 mA;(8)power dissipation: 200 mW;(9)storage temperature: -65 to +150 ;(10)lead temperature (10 s): 260 . If you want to know more information such as the electrical characteristics about the KIC7SZ00FU, please download the datasheet in www.seekic.com or www.chinaicmart.com .