Features: ·High-speed switching·No secondary breakdown.PinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Drain to Source Voltage VDSS 300 -300 V Gate to Source Voltage VGS ±20 ±20 V Drain Current Ts = 80 *1 ID 340 -235 A peak drain current *2 IDM 14 ...
KHC2300: Features: ·High-speed switching·No secondary breakdown.PinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Drain to Source Voltage VDSS 300 -300 V Gate to Source Voltag...
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Multilayer Ceramic Capacitors (MLCC) - SMD/SMT 2.2UF 200V 20%
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Multilayer Ceramic Capacitors (MLCC) - SMD/SMT 10UF 25V 20%
Parameter | Symbol | N-Channel | P-Channel | Unit |
Drain to Source Voltage | VDSS | 300 | -300 | V |
Gate to Source Voltage | VGS | ±20 | ±20 | V |
Drain Current Ts = 80 *1 | ID | 340 | -235 | A |
peak drain current *2 | IDM | 14 | -0.9 | S |
total power dissipation Ts = 80 ; *3 Tamb= 25 ; * 4 Tamb = 25 ; * 5 Tamb= 25 ; *6 |
Ptot | 1.6 | W | |
1.8 | ||||
0.9 | ||||
1.2 | ||||
storage temperature | Tstg | -55 to 150 | ||
operating junction temperature | Tj | -55 to 150 | ||
thermal resistance from junction to soldering point | Rth j-s | 43 | K/W |
*1. Ts is the temperature at the soldering point of the drain leads.
*2. Pulse width and duty cycle limited by maximum junction temperature.
*3. Maximum permissible dissipation per MOS transistor. (So both devices may be loaded up to 1.6 W at the same time).