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KHB7D5N60P1

Features: ·VDSS=600V, ID=7.5A·Drain-Source ON Resistance : RDS(ON)=1.2 @VGS=10V·Qg(typ.)= 32.5nCPinoutSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB7D5N60P1 KHB7D5N60F1KHB7D5N60F2 Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V ...

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SeekIC No. : 004385359 Detail

KHB7D5N60P1: Features: ·VDSS=600V, ID=7.5A·Drain-Source ON Resistance : RDS(ON)=1.2 @VGS=10V·Qg(typ.)= 32.5nCPinoutSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB7D5N60P1 KHB7D5N60F1...

KHB7D5N60P1 Data Sheet

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Part Number:
KHB7D5N60P1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

·VDSS=600V, ID=7.5A
·Drain-Source ON Resistance : RDS(ON)=1.2 @VGS=10V
·Qg(typ.)= 32.5nC



Pinout

Connection Diagram


Specifications

CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB7D5N60P1
KHB7D5N60F1
KHB7D5N60F2
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Drain Current @TC=25
ID
7.5
7.5*
A
@TC=100
4.6
4.6*
Pulse (Note 1)
IDP
30
30*
Single pulse Avalanche Energy (Note 2)
EAS
230
mJ
Repetitive Avalanche Energy (Note 1)
EAR
14.7
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Drain Power Dissipation TC=25
PD
147
48
W
Derate above 25
1.18
0.38
W/
Maximum Junction Temperature
Tj
150
Storage temperature range
TSTG
-55~150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
RthJC
0.85
2.6
/W
Thermal Resistance, Case-to-Sink
RthCS
0.5
-
/W
Thermal Resistance, Junction-to- Ambient
RthJA
62.5
62.5
/W
* : Drain current limited by maximum junction temperature.




Description

This planar stripe MOSFET KHB7D5N60P1 has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.




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