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KHB7D0N65F1

Features: ·VDSS=650V, ID=7A·Drain-Source ON Resistance : SDS(ON)=1.4 @VGS=10V·Qg(typ.)= 32nCPinoutSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB7D0N65P1 KHB7D0N65F1KHB7D0N65F2 Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Dr...

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SeekIC No. : 004385354 Detail

KHB7D0N65F1: Features: ·VDSS=650V, ID=7A·Drain-Source ON Resistance : SDS(ON)=1.4 @VGS=10V·Qg(typ.)= 32nCPinoutSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB7D0N65P1 KHB7D0N65F1KHB7...

KHB7D0N65F1 Data Sheet

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Part Number:
KHB7D0N65F1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·VDSS=650V, ID=7A
·Drain-Source ON Resistance : SDS(ON)=1.4 @VGS=10V
·Qg(typ.)= 32nC



Pinout

Connection Diagram


Specifications

CHARACTERISTIC
SYMBOL
Rating
UNIT
KHB7D0N65P1
KHB7D0N65F1
KHB7D0N65F2
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Drain Current @TC=25
ID
7
7*
A
@TC=100
4.2
4.2*
Pulse (Note 1)
IDP
28
28*
Single pulse Avalanche Energy (Note 2)
EAS
212
mJ
Repetitive Avalanche Energy (Note 1)
EAR
1.6
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Drain Power Dissipation TC=25
PD
160
52
W
Derate above 25
1.28
0.42
W/
Maximum Junction Temperature
Tj
150
Storage temperature range
TSTG
-55~150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
RthJC
0.78
2.4
/W
Thermal Resistance, Case-to-Sink
RthCS
0.5
-
/W
Thermal Resistance, Junction-to- Ambient
RthJA
62.5
62.5
/W
* : Drain current limited by maximum junction temperature.




Description

This planar stripe MOSFET KHB7D0N65F1 has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.




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