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KHB7D0N65P1

Features: `VDSS=650V, ID=7A`Drain-Source ON Resistance :`RDS(ON)=1.4 @VGS=10V`Qg(typ.)= 32nCSpecifications Parameter Symbol KHB7D0N65P1 KHB7D0N65F1 Unit Drain to source voltage VDSS 650 650 V Gate to source voltage VGSS ±30 ±30 V Drain current Continuous @TC=25 @TC=100 ...

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SeekIC No. : 004385356 Detail

KHB7D0N65P1: Features: `VDSS=650V, ID=7A`Drain-Source ON Resistance :`RDS(ON)=1.4 @VGS=10V`Qg(typ.)= 32nCSpecifications Parameter Symbol KHB7D0N65P1 KHB7D0N65F1 Unit Drain to source voltage VDSS 65...

KHB7D0N65P1 Data Sheet

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Part Number:
KHB7D0N65P1
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`VDSS=650V, ID=7A
`Drain-Source ON Resistance :
`RDS(ON)=1.4 @VGS=10V
`Qg(typ.)= 32nC


Specifications

Parameter Symbol KHB7D0N65P1 KHB7D0N65F1 Unit
Drain to source voltage VDSS 650 650 V
Gate to source voltage VGSS ±30 ±30 V
Drain current Continuous @TC=25
@TC=100
ID 7
4.2		 7
4.2		 A
Drain current Pulsed (Note1) IDP 28 28 A
Single Pulsed Avalanche Energy
(Note 2)		 EAS 212 mJ
Repetitive Avalanche Energy
(Note 1)		 EAR 1.6 mJ
Peak Diode Recovery dv/dt
(Note 3)		 dv/dt 4.5 V/ns
Drain PowerDissipation
Tc=25
Derate above 25		 PD

160
1.28

 52
0.42		 W
W/
Operating and Storage Temperature Range TJ, Tstg -55 to 150
* : Drain current limited by maximum junction temperature.


Description

This planar stripe MOSFET KHB7D0N65P1 has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.




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