Features: VDSS(Min.)= 600V, ID= 4.5ADrain-Source ON Resistance :RDS(ON)=2.5 @VGS =10VQg(typ.) =17nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D5N20F2 Drain-Source VoltageGate-Source Voltage VDSSVGSS 600±30 VV Drain Current @Tc=...
KHB4D5N60P: Features: VDSS(Min.)= 600V, ID= 4.5ADrain-Source ON Resistance :RDS(ON)=2.5 @VGS =10VQg(typ.) =17nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D...
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Features: `VDSS=800V, ID=4A`Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V`Qg(typ.)=25nCSpeci...
Features: `VDSS=800V, ID=4A`Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V`Qg(typ.)=25nCSpeci...
Features: `VDSS=800V, ID=4A`Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V`Qg(typ.)=25nCSpeci...
CHARACTERISTIC |
SYMBOL |
RATING |
UNIT | ||
KHB9D5N20P1 |
KHB9D5N20F1 KHB9D5N20F2 | ||||
Drain-Source Voltage Gate-Source Voltage |
VDSS VGSS |
600 ±30 |
V V | ||
Drain Current | @Tc=25 @Tc=25 Pulsed(Note1) |
ID IDP |
4.5 2.8 18 |
4.5* 2.8* 18* |
A |
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) |
EAS EAR dv/dt |
260 10.6 4.5 |
mJ mJ V/ns | ||
Drain Power Dissipation |
Tc=25 Derate above25 |
PD |
106 0.85 |
36 0.29 |
W W/ |
Maximum Junction Temperature Storage Temperature Range |
Tj Tstg |
150 -55 150 |
| ||
Thermal Characteristics | |||||
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to- Ambient |
RthJC RthCS RthJA |
1.44 0.5 62.5 |
3.13 - 62.5 |
/W /W /W |
This planar stripe MOSFET KHB4D5N60P has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. KHB4D5N60P is mainly suitable for switching mode power supplies.