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KHB4D5N60P

Features: VDSS(Min.)= 600V, ID= 4.5ADrain-Source ON Resistance :RDS(ON)=2.5 @VGS =10VQg(typ.) =17nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D5N20F2 Drain-Source VoltageGate-Source Voltage VDSSVGSS 600±30 VV Drain Current @Tc=...

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SeekIC No. : 004385349 Detail

KHB4D5N60P: Features: VDSS(Min.)= 600V, ID= 4.5ADrain-Source ON Resistance :RDS(ON)=2.5 @VGS =10VQg(typ.) =17nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB9D5N20P1 KHB9D5N20F1KHB9D...

KHB4D5N60P Data Sheet

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Part Number:
KHB4D5N60P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

VDSS(Min.)= 600V, ID= 4.5A
Drain-Source ON Resistance :
RDS(ON)=2.5 @VGS =10V
Qg(typ.) =17nC


Specifications

CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB9D5N20P1
KHB9D5N20F1
KHB9D5N20F2
Drain-Source Voltage

Gate-Source Voltage
VDSS

VGSS
600

±30
V

V
Drain Current @Tc=25
@Tc=25

Pulsed(Note1)
ID


IDP
4.5
2.8

18
4.5*
2.8*

18*
A
Single Pulsed Avalanche Energy (Note 2)

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)
EAS

EAR

dv/dt
260

10.6

4.5
mJ

mJ

V/ns
Drain Power
Dissipation		 Tc=25
Derate above25
PD
106
0.85
36
0.29
W
W/
Maximum Junction Temperature

Storage Temperature Range
Tj

Tstg
150

-55 150


Thermal Characteristics
Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to- Ambient
RthJC


RthCS

RthJA
1.44

0.5

62.5
3.13

-

62.5
/W

/W

/W

* : Drain current limited by maximum junction temperature.


Description

This planar stripe MOSFET KHB4D5N60P has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. KHB4D5N60P is mainly suitable for switching mode power supplies.




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