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KHB4D0N80P1

Features: `VDSS=800V, ID=4A`Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V`Qg(typ.)=25nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB4D0N80P1 KHB4D0N80F1KHB4D0N80F2 Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS 30 V Drain Cu...

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SeekIC No. : 004385348 Detail

KHB4D0N80P1: Features: `VDSS=800V, ID=4A`Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V`Qg(typ.)=25nCSpecifications CHARACTERISTIC SYMBOL RATING UNIT KHB4D0N80P1 KHB4D0N80F1KHB4D0N80...

KHB4D0N80P1 Data Sheet

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Part Number:
KHB4D0N80P1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`VDSS=800V, ID=4A
`Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V
`Qg(typ.)=25nC


Specifications

CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB4D0N80P1
KHB4D0N80F1
KHB4D0N80F2
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
30
V
Drain Current @TC=25
ID
4.0
4.0*
A
Pulsed (Note1)
IDP
16
16*
A
Single Pulsed Avalanche Energy
(Note 2)
EAS
460
mJ
Repetitive Avalanche Energy
(Note 1)
EAR
13
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.0
V/ns
Drain Power
Dissipation		 Tc=25
PD
130
43
W
Derate above25
1.04
0.34
W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
RthJC
0.96
2.9
/W
Thermal Resistance, Junction-to- Ambient
RthJA
62.5
62.5
/W
* : Drain current limited by maximum junction temperature.


Description

This planar stripe MOSFET KHB4D0N80P1 has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. KHB4D0N80P1 is mainly suitable for electronic ballast and switch mode power supplies.




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