Position: Home  > All Categories> Integrated Circuits (ICs) > KHB4D0N65P

KHB4D0N65P

Features: `VDSS=650V, ID=4A`Drain-Source ON Resistance: RDS(ON)=3.0 @VGS = 10V`Qg(typ.)=20nCSpecifications Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 60 V ID Drain Current @TC=25 4.0 A IDP Pulsed (Note1) 16 A VGGS Gate-to-Source Voltage ±30 V ...

product image

KHB4D0N65P Picture
See larger image
SeekIC No. : 004385345 Detail

KHB4D0N65P: Features: `VDSS=650V, ID=4A`Drain-Source ON Resistance: RDS(ON)=3.0 @VGS = 10V`Qg(typ.)=20nCSpecifications Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 60 V ID Dr...

KHB4D0N65P Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
KHB4D0N65P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`VDSS=650V, ID=4A
`Drain-Source ON Resistance
: RDS(ON)=3.0 @VGS = 10V
`Qg(typ.)=20nC


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 60 V
ID Drain Current @TC=25 4.0 A
IDP Pulsed (Note1) 16 A
VGGS Gate-to-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy
(Note 2)		 260 mJ
EAR Repetitive Avalanche Energy
(Note 1)		 10.6 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)		 4.5 V/ns
PD Drain Power
Dissipation		 Tc=25 106
0.85		 W
W/
Derate above25
TJ Maximum Junction Temperature 150
Tstg Storage Temperature Range -55 150
* : Drain current limited by maximum junction temperature.


Description

This planar stripe MOSFET KHB4D0N65P has better characteristics, such as fast witching time, low on resistance, low gate charge and excellent valanche characteristics. KHB4D0N65P is mainly suitable for switch mode power upplies.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
RF and RFID
X3C26P1-30S
1P620S
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Integrated Circuits (ICs)
TA8435H
1MB12-140
Connectors, Interconnects
ASP-134488-01
WM4078-ND
View more