Features: `VDSS=650V, ID=4A`Drain-Source ON Resistance: RDS(ON)=3.0 @VGS = 10V`Qg(typ.)=20nCSpecifications Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 60 V ID Drain Current @TC=25 4.0 A IDP Pulsed (Note1) 16 A VGGS Gate-to-Source Voltage ±30 V ...
KHB4D0N65P: Features: `VDSS=650V, ID=4A`Drain-Source ON Resistance: RDS(ON)=3.0 @VGS = 10V`Qg(typ.)=20nCSpecifications Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 60 V ID Dr...
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Features: `VDSS=800V, ID=4A`Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V`Qg(typ.)=25nCSpeci...
Features: `VDSS=800V, ID=4A`Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V`Qg(typ.)=25nCSpeci...
Features: VDSS(Min.)= 600V, ID= 4.5ADrain-Source ON Resistance :RDS(ON)=2.5 @VGS =10VQg(typ.) =17n...
Symbol | Characteristic | Value | Units | |
VDSS | Drain-to-Source Voltage | 60 | V | |
ID | Drain Current | @TC=25 | 4.0 | A |
IDP | Pulsed (Note1) | 16 | A | |
VGGS | Gate-to-Source Voltage | ±30 | V | |
EAS | Single Pulsed Avalanche Energy (Note 2) |
260 | mJ | |
EAR | Repetitive Avalanche Energy (Note 1) |
10.6 | mJ | |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 | V/ns | |
PD | Drain Power Dissipation |
Tc=25 | 106 0.85 |
W W/ |
Derate above25 | ||||
TJ | Maximum Junction Temperature | 150 | ||
Tstg | Storage Temperature Range | -55 150 |
This planar stripe MOSFET KHB4D0N65P has better characteristics, such as fast witching time, low on resistance, low gate charge and excellent valanche characteristics. KHB4D0N65P is mainly suitable for switch mode power upplies.