Position: Home  > All Categories> Integrated Circuits (ICs) > KHB2D0N60P

KHB2D0N60P

Features: ·VDSS= 600V, ID= 2.0A·Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V·Qg(typ.) = 10.9nCPinoutSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB2D0N60P KHB2D0N60FKHB2D0N60F2 Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 ...

product image

KHB2D0N60P Picture
See larger image
SeekIC No. : 004385344 Detail

KHB2D0N60P: Features: ·VDSS= 600V, ID= 2.0A·Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V·Qg(typ.) = 10.9nCPinoutSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB2D0N60P KHB2D0N...

KHB2D0N60P Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
KHB2D0N60P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·VDSS= 600V, ID= 2.0A
·Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V
·Qg(typ.) = 10.9nC






Pinout

Connection Diagram


Specifications

CHARACTERISTIC
SYMBOL
Rating
UNIT
KHB2D0N60P
KHB2D0N60F
KHB2D0N60F2
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Drain Current @TC=25
ID
2.0
2.0*
A
@TC=100
1.2
1.2*
Pulse (Note 1)
IDP
8.0
8.0*
Single pulse Avalanche Energy (Note 2)
EAS
120
mJ
Repetitive Avalanche Energy (Note 1)
EAR
5.0
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
5.0
V/ns
Drain Power Dissipation TC=25
PD
54
23
W
Derate above 25
0.43
0.18
W/
Maximum Junction Temperature
Tj
150
Storage temperature range
TSTG
-55~150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
RthJC
2.32
5.5
/W
Thermal Resistance, Case-to-Sink
RthCS
0.5
-
/W
Thermal Resistance, Junction-to- Ambient
RthJA
62.5
62.5
/W
* : Drain current limited by maximum junction temperature.




Description

This planar stripe MOSFET KHB2D0N60P has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. KHB2D0N60P is mainly suitable for switching mode power supplies.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Crystals and Oscillators
WT325BI0030.000000
2SB49
Switches
US32DMRJ
HBGQ22P-11ET
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Circuit Protection
A50QS75-4Y
F-17*77
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Audio Products
HUC1002
WM-64CT
View more