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KHB2D0N60F

Features: ·VDSS= 600V, ID= 2.0A·Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V·Qg(typ.) = 10.9nCPinoutSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB2D0N60P KHB2D0N60FKHB2D0N60F2 Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 ...

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SeekIC No. : 004385342 Detail

KHB2D0N60F: Features: ·VDSS= 600V, ID= 2.0A·Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V·Qg(typ.) = 10.9nCPinoutSpecifications CHARACTERISTIC SYMBOL Rating UNIT KHB2D0N60P KHB2D0N...

KHB2D0N60F Data Sheet

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Part Number:
KHB2D0N60F
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • 15 Days
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Product Details

Description



Features:

·VDSS= 600V, ID= 2.0A
·Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V
·Qg(typ.) = 10.9nC






Pinout

Connection Diagram


Specifications

CHARACTERISTIC
SYMBOL
Rating
UNIT
KHB2D0N60P
KHB2D0N60F
KHB2D0N60F2
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Drain Current @TC=25
ID
2.0
2.0*
A
@TC=100
1.2
1.2*
Pulse (Note 1)
IDP
8.0
8.0*
Single pulse Avalanche Energy (Note 2)
EAS
120
mJ
Repetitive Avalanche Energy (Note 1)
EAR
5.0
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
5.0
V/ns
Drain Power Dissipation TC=25
PD
54
23
W
Derate above 25
0.43
0.18
W/
Maximum Junction Temperature
Tj
150
Storage temperature range
TSTG
-55~150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
RthJC
2.32
5.5
/W
Thermal Resistance, Case-to-Sink
RthCS
0.5
-
/W
Thermal Resistance, Junction-to- Ambient
RthJA
62.5
62.5
/W
* : Drain current limited by maximum junction temperature.




Description

This planar stripe MOSFET KHB2D0N60F  has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. KHB2D0N60F  is mainly suitable for switching mode power supplies.




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