KBE00G003M-D411

NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is V_CC,+0.3V which, during transitions, may overshoot to V_CC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The KBE00G003M is a Multi-Chip Package Memory which combines 1Gbit Nand Flash Memory(organized with two pieces of 512Mbit Nand Flash Memory) and 512Mbit synchronous high data rate Dynamic RAM. (organized with two pieces of 256Mbit Mobile SDRAM) 1Gbit NAND Flash memory is organized as 128M x8 bits and 512Mbit Mobile SDRAM is organized as 8M x16 bits x4 banks In 1Gbit NAND Flash, its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typically 200s on the 528-byte page and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the data register can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping out algorithm.

This KBE00G003M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

In 512Mbit SDRAM, Synchronous design make a device controlled precisely with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

The KBE00G003A is suitable for use in data memory of mobile communication system to reduce not only mount area but also power consumption. This device is available in 107-ball FBGA Type.