K9K4G08UOM-YCBO

The K9K4G08UOM-YCBO is 4G bit with spare 128M bit capacity and the NAND cell of it offers the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device)or 64K-word(X16 device) block. Data in the data page can be read out at 50ns cycle time per byte(30ns, only X8 3.3v device) or word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input.

Features of the K9K4G08UOM-YCBO are:(1) fast write cycle time;(2) automatic program and erase;(3) unique ID for copyright protection;(4) inteligent copy-back with internal 1 bit/528 byte;(5) command register operation;(6) hardware data protection;(7) reliable CMOS floating-gate technology.

The absolute maximum ratings of the K9K4G08UOM-YCBO can be summarized as:(1): voltage on any pin relative to VSS is -0.6 V to +2.45 V(Vout,Vin) or is -0.2 V to +2.45(Vcc);(2): short circuit current(IOS) is 5 mA;(3): temperature under bias(Tbias) is -10 to +125; (4): storage temperature(Tstg) is -40 to +125.