K9K4G08U1

Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXU0M is 2G bit with spare 64M bit capacity.  Its NAND cell provides the most cost- effective solution for the solid state mass storage market. A program operation can be performed in typical 200s on the 2112- byte(X8 device) or 1056-word(X16 device) page  and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 30ns cycle time per byte(X8 device) or word(X16 device)..

The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2GXXU0Ms extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2GXXU0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.