K9F5616Q0B-DIB0

Features:

*Voltage Supply 
    - 1.8V device(K9F56XXQ0B) : 1.70~1.95V
    - 3.3V device(K9F56XXU0B) :  2.7 ~ 3.6 V
*Organization
  - Memory Cell Array
    - X8   device(K9F5608X0B) : (32M + 1024K)bit x 8 bit
    - X16 device(K9F5616X0B) : (16M +   512K)bit x 16bit
  - Data Register 
    - X8   device(K9F5608X0B) : (512 + 16)bit x 8bit
    - X16 device(K9F5616X0B) : (256 +   8)bit x16bit
*Automatic Program and Erase
  - Page Program
    - X8   device(K9F5608X0B) : (512 + 16)Byte
    - X16 device(K9F5616X0B) : (256 +   8)Word
  - Block Erase :
    - X8   device(K9F5608X0B) : (16K + 512)Byte
    - X16 device(K9F5616X0B) : (  8K + 256)Word
*Page Read Operation
  - Page Size
    - X8   device(K9F5608X0B) : (512 + 16)Byte
    - X16 device(K9F5616X0B) : (256 +   8)Word
  - Random Access      : 10ms(Max.)
  - Serial Page Access : 50ns(Min.)
*Fast Write Cycle Time
  - Program time : 200ms(Typ.)
  - Block Erase Time : 2ms(Typ.)
*Command/Address/Data Multiplexed I/O Port
*Hardware Data Protection
  - Program/Erase Lockout During Power Transitions
*Reliable CMOS Floating-Gate Technology
  - Endurance        : 100K Program/Erase Cycles
  - Data Retention : 10 Years
*Command Register Operation
*Intelligent Copy-Back 
*Unique ID for Copyright Protection
*Package
  - K9F56XXU0B-YCB0/YIB0
    48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
  - K9F56XXX0B-DCB0/DIB0
    63- Ball TBGA  ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
  - K9F5608U0B-VCB0/VIB0
    48 - Pin WSOP I (12X17X0.7mm)
  - K9F56XXU0B-PCB0/PIB0
    48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
  - K9F56XXX0B-HCB0/HIB0
    63- Ball TBGA  ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
      - Pb-free Package
  - K9F5608U0B-FCB0/FIB0
    48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
      * K9F5608U0B-V,F(WSOPI )  is the same  device as 
         K9F5608U0B-Y,P(TSOP1)  except package type.


Pinout




Specifications

Parameter		Symbol	Rating		Unit
			K9F56XXQ0B(1.8V)	K9F56XXU0B(3.3V)
Voltage on any pin relative to VSS		VIN/OUT	-0.6 to + 2.45	-0.6 to + 4.6	V
		VCC	-0.2 to + 2.45	-0.6 to + 4.6
		VCCQ	-0.2 to + 2.45	-0.6 to + 4.6
Temperature Under Bias	K9F56XXX0B-XCB0	TBIAS	-10 to + 125
	K9F56XXX0B-XIB0		-40 to +125
Storage Temperature	K9F56XXX0B-XCB0	TSTG	-65 to +150
	K9F56XXX0B-XIB0
Short Circuit Current		Ios	5

Description

Offered in 32Mx8bit or 16Mx16bit, the K9F5616Q0B-DIB0 is 256M bit with spare 8M bit capacity.  The K9F5616Q0B-DIB0 is offered in 1.8V or 3.3V Vcc.  Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.  A program operation can be performed in typical 200ms on the 528-byte(X8 device) or 264-word(X16 device) page  and an erase operation can be performed in ypical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block.  Data in the page can be read out at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input.   The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.   Even the write-intensive systems can take advantage of the K9F5616Q0B-DIB0 extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.


The K9F5616Q0B-DIB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.