K9F5608D0C

Features:

· Voltage Supply
- 1.8V device(K9F56XXQ0C) : 1.70~1.95V
- 2.65V device(K9F56XXD0C) : 2.4~2.9V
- 3.3V device(K9F56XXU0C) : 2.7 ~ 3.6 V
· Organization
- Memory Cell Array
- X8 device(K9F5608X0C) : (32M + 1024K)bit x 8 bit
- X16 device(K9F5616X0C) : (16M + 512K)bit x 16bit
- Data Register
- X8 device(K9F5608X0C) : (512 + 16)bit x 8bit
- X16 device(K9F5616X0C) : (256 + 8)bit x16bit
· Automatic Program and Erase
- Page Program
- X8 device(K9F5608X0C) : (512 + 16)Byte
- X16 device(K9F5616X0C) : (256 + 8)Word
- Block Erase :
- X8 device(K9F5608X0C) : (16K + 512)Byte
- X16 device(K9F5616X0C) : ( 8K + 256)Word
· Page Read Operation
- Page Size
- X8 device(K9F5608X0C) : (512 + 16)Byte
- X16 device(K9F5616X0C) : (256 + 8)Word
- Random Access : 10ms(Max.)
- Serial Page Access : 50ns(Min.)* *K9F5616Q0C : 60ns
· Fast Write Cycle Time
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
· Command Register Operation
· Intelligent Copy-Back
· Unique ID for Copyright Protection
· Power-On Auto-Read Operation
· Safe Lock Mechanism
· Package
- K9F56XXX0C-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F56XXX0C-DCB0/DIB0 63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F5608U0C-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm)
- K9F56XXX0C-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F56XXX0C-HCB0/HIB0 63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
- K9F5608U0C-FCB0/FIB0 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package * K9F5608U0C-V,F(WSOPI ) is the same device as K9F5608U0C-Y,P(TSOP1) except package type.


Pinout




Specifications

Parameter		Symbol		Rating	Unit
			1.8V DEVICE	3.3V/2.65V DEVICE
Voltage on any pin relative to VSS		VIN/OUT	-0.6 to + 2.45	-0.6 to + 4.6	V
		VCC	-0.2 to + 2.45	-0.6 to + 4.6
		VCCQ	-0.2 to + 2.45	-0.6 to + 4.6
Temperature Under Bias	K9F56XXX0C-XCB0	TBIAS	-10 to +125		°C
	K9F56XXX0C-XIB0		-40 to +125
Storage Temperature	K9F56XXX0C-XCB0	TSTG	-65 to +150		°C
	K9F56XXX0C-XIB0
Short Circuit Current		Ios	5		mA

Description

Offered in 32Mx8bit or 16Mx16bit, the K9F5608D0C is 256M bit with spare 8M bit capacity. The K9F5608D0C is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on a 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns(K9F5616Q0C : 60ns) cycle time per word.

The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F56XXX0C¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9F5608D0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.