DescriptionThe K9F5608X0D-FCB0 is designed as one kind of 32M x 8 bit NAND flash memory that is offered in 1.8V, 2.65V, 3.3V Vcc. And this device is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatil...
K9F5608X0D-FCB0: DescriptionThe K9F5608X0D-FCB0 is designed as one kind of 32M x 8 bit NAND flash memory that is offered in 1.8V, 2.65V, 3.3V Vcc. And this device is an optimum solution for large nonvolatile storage...
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Features: · Voltage Supply- 1.8V device(K9F56XXQ0C) : 1.70~1.95V- 2.65V device(K9F56XXD0C) : 2.4~2...
Features: • Voltage Supply - 1.8V device(K9F5608R0D) : 1.65~1.95V - 2.65V device(K9F5608D0D)...
Features: *Voltage Supply - 1.8V device(K9F56XXQ0B) : 1.70~1.95V - 3.3V device(K9F56XXU0B) : 2.7 ...
The K9F5608X0D-FCB0 is designed as one kind of 32M x 8 bit NAND flash memory that is offered in 1.8V, 2.65V, 3.3V Vcc. And this device is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
Features of the K9F5608X0D-FCB0 are:(1)unique ID for copyright protection; (2)intelligent copy-back; (3)command register operation; (4)organization: memory cell array - (32M + 1024K)bit x 8 bit and data register - (512 + 16)bit x 8bit; (5)automatic program and erase: page program - (512 + 16)byte and block erase - (16K + 512)byte; (6)page read operation; (7)fast write cycle time.
The absolute maximum ratings of the K9F5608X0D-FCB0 can be summarized as:(1)Voltage on any pin relative to Vss: -0.6 V to +4.6 V;(2)Temperature Under Bias: -10 °C to +125 °C;(3)Storage Temperature: -65 to +150 °C;(4)Short Circuit Current: 5 mA. And the location of this device is erased (FFh) except locations where the initial invalid block(s) information is written prior to shipping. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .