K9F5608U0M-YIB0

The K9F5608U0M-YIB0 are a 32M(33,554,432)x8bit NAND Flash Memory with a spare 1,024K(1,048,576)x8bit. Its NAND cell provides the most cost-effective  olution for the solid state mass storage market. A program operation programs the 528- byte page in typically 200s and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller K9F5608U0M-YIB0 automates all program and erase functions including pulse repetition, where
required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9F5608U0M-YIB0 extended reliability of  00K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F5608U0M-YIB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.