K9F2G08UOM-YCB0

The K9F2G08UOM-YCB0 is designed as one kind of 256M x 8 bit NAND flash memory device that provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block.

Features of the K9F2G08UOM-YCB0 are:(1)Voltage Supply: 1.65V to 1.95V and 2.70V to 3.60V;(2)Unique ID for Copyright Protection;(3)Intelligent Copy-Back with internal 1bit/528Byte EDC;(4)Command Driven Operation;(5)Reliable CMOS Floating-Gate Technology;(6)Hardware Data Protection - Program/Erase Lockout During Power Transitions;(7)Command/Address/Data Multiplexed I/O Port;(8)Fast Write Cycle Time: Page Program time is 200 s(Typ.) and Block Erase Time is 1.5 ms(Typ.).etx.

The absolute maximum ratings of the K9F2G08UOM-YCB0 can be summarized as:(1)Voltage on any pin relative to VSS: -0.6 to +2.45 V or -0.6 to +4.6 V;(2)Temperature Under Bias: -10 to +125 ;(3)Storage Temperature: -65 to +150 °C;(4)Short Circuit Current: 5 mA. If you want to know more information such as the electrical characteristics about the K9F2G08UOM-YCB0, please download the datasheet in www.seekic.com or www.chinaicmart.com.