K9F2808U0A-YCB0

Features: · Voltage Supply : 2.7V~3.6V· Organization - Memory Cell Array : (16M + 512K)bit x 8bit - Data Register : (512 + 16)bit x8bit· Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte· 528-Byte Page Read Operation - Random Access : 10ms(Max.) - Serial P...

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K9F2808U0A-YCB0 Picture
SeekIC No. : 004383408 Detail

K9F2808U0A-YCB0: Features: · Voltage Supply : 2.7V~3.6V· Organization - Memory Cell Array : (16M + 512K)bit x 8bit - Data Register : (512 + 16)bit x8bit· Automatic Program and Erase - Page Program : (512 + 16)Byte -...

floor Price/Ceiling Price

Part Number:
K9F2808U0A-YCB0
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/6

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Product Details

Description



Features:

· Voltage Supply : 2.7V~3.6V
· Organization
  - Memory Cell Array : (16M + 512K)bit x 8bit
  - Data Register : (512 + 16)bit x8bit
· Automatic Program and Erase
  - Page Program : (512 + 16)Byte
  - Block Erase : (16K + 512)Byte
· 528-Byte Page Read Operation
  - Random Access : 10ms(Max.)
  - Serial Page Access : 50ns(Min.)
· Fast Write Cycle Time
  - Program Time : 200ms(Typ.)
  - Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
  - Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
  - Endurance : 100K Program/Erase Cycles
  - Data Retention : 10 Years
· Command Register Operation
· Package : 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)



Pinout

  Connection Diagram      Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN
-0.6 to + 4.6
V
VCC
-0.6 to + 4.6
Temperature Under Bias
K9F2808U0A-YCB0
TBIAS
-10 to +125
°C
K9F2808U0A-YIB0
-40 to +125
Storage Temperature
TSTG
-65 to +150
°C



Description

The K9F2808U0A-YCB0 is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200ms and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9F2808U0A¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9F2808U0A-YCB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility.


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