K9F2G08U0M

Features:

Voltage Supply
    -1.8V device(K9F2GXXQ0M): 1.70V~1.95V
    -3.3V device(K9F2GXXU0M):  2.7 V ~3.6 V
Organization
    - Memory Cell Array
    -X8   device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit
    -X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit
    - Data Register   
    -X8   device(K9F2G08X0M):  (2K + 64)bit x8bit
    -X16 device(K9F2G16X0M):  (1K + 32)bit x16bit
    - Cache Register
    -X8   device(K9F2G08X0M) :  (2K + 64)bit x8bit
    -X16 device(K9F2G16X0M) :  (1K + 32)bit x16bit
Automatic Program and Erase
    - Page Program
    -X8   device(K9F2G08X0M) :  (2K + 64)Byte
    -X16 device(K9F2G16X0M) :  (1K + 32)Word
    - Block Erase
    -X8   device(K9F2G08X0M) :  (128K + 4K)Byte
    -X16 device(K9F2G16X0M) :  (64K + 2K)Word
Page Read Operation
    - Page Size
    - X8   device(K9F2G08X0M) :  2K-Byte
    - X16 device(K9F2G16X0M) : 1K-Word
    - Random Read : 25ms(Max.)
    - Serial  Access : 50ns(Min.)
                            30ns(Min., K9F2G08U0M only)
Fast Write Cycle Time
    - Page Program time : 300ms(Typ.)
    - Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
    - Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
    - Endurance : 100K Program/Erase Cycles
    - Data Retention : 10 Years
Command Register Operation
Cache Program Operation for High Performance Program
Power-On Auto-Read Operation
Intelligent Copy-Back Operation
Unique ID for Copyright Protection Package :
    - K9F2GXXX0M-YCB0/YIB0
    48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
    - K9F2GXXX0M-PCB0/PIB0 : Pb-FREE PACKAGE
    48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)


Pinout




Specifications

Parameter		Symbol	Rating		Unit
			K9F2GXXQ0M(1.8V)	K9F2GXXU0M(3.3V)
Voltage on any pin relative to VSS		VIN/OUT	-0.6to+2.45	-0.6to+4.6	V
		VCC	-0.6 to + 2.45	-0.6 to + 4.6
TemperatureUnderBias	K9F2GXXU0M-XCB0	TBIAS	-10 to +125		°C
	K9F2GXXU0M-XIB0		-40 to +125
Storage Temperature	K9F2GXXU0M-XCB0	TSTG	-40 to +125		°C
	K9F2GXXU0M-XIB0
Short Circuit Current		Ios	5		mA

Description

Offered in 256Mx8bit or 128Mx16bit, the K9F2G08U0M is 2G bit with spare 64M bit capacity.  Its NAND cell provides the most cost- effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112- byte(X8 device) or 1056-word(X16 device) page  and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(30ns, only X8 device) cycle time per byte or word(X16 device)..

The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08U0M s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non volatility.