K9F2G08R0A

Features: • Voltage Supply- 1.65V ~ 1.95V- 2.70V ~ 3.60V• Organization- Memory Cell Array : (256M + 8M) x 8bit- Data Register : (2K + 64) x 8bit• Automatic Program and Erase- Page Program : (2K + 64)Byte- Block Erase : (128K + 4K)Byte• Page Read Operation- Page Size : (2K +...

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K9F2G08R0A Picture
SeekIC No. : 004383424 Detail

K9F2G08R0A: Features: • Voltage Supply- 1.65V ~ 1.95V- 2.70V ~ 3.60V• Organization- Memory Cell Array : (256M + 8M) x 8bit- Data Register : (2K + 64) x 8bit• Automatic Program and Erase- Page ...

floor Price/Ceiling Price

Part Number:
K9F2G08R0A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Voltage Supply
- 1.65V ~ 1.95V
- 2.70V ~ 3.60V
• Organization
- Memory Cell Array : (256M + 8M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25s(Max.)
- Serial Access : 25ns(Min.) (*K9F2G08R0A: tRC = 45ns(Min))
• Fast Write Cycle Time
- Page Program time : 200s(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)
- Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE 63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)
- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2G08U0A-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)



Pinout

  Connection Diagram


Description

Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(45ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0As extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.




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