Features: • Voltage Supply- 1.65V ~ 1.95V- 2.70V ~ 3.60V• Organization- Memory Cell Array : (256M + 8M) x 8bit- Data Register : (2K + 64) x 8bit• Automatic Program and Erase- Page Program : (2K + 64)Byte- Block Erase : (128K + 4K)Byte• Page Read Operation- Page Size : (2K +...
K9F2G08R0A: Features: • Voltage Supply- 1.65V ~ 1.95V- 2.70V ~ 3.60V• Organization- Memory Cell Array : (256M + 8M) x 8bit- Data Register : (2K + 64) x 8bit• Automatic Program and Erase- Page ...
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Features: *Voltage Supply - K9F2808Q0B : 1.7~1.9V - K9F2808U0B : 2.7 ~ 3.6 V *Organization - Memo...
Features: · Voltage Supply- 1.8V device(K9F28XXQ0C) :1.7~1.95V- 3.3V device(K9F28XXU0C) : 2.7 ~ 3....
Features: · Voltage Supply : 2.7V~3.6V· Organization - Memory Cell Array : (16M + 512K)bit x 8bit ...
Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(45ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0As extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.