K9F2816Q0C-DCB0

Features:

· Voltage Supply
- 1.8V device(K9F28XXQ0C) :  1.7~1.95V
- 3.3V device(K9F28XXU0C) : 2.7 ~ 3.6 V
· Organization
- Memory Cell Array
- X8 device(K9F2808X0C) :   (16M + 512K)bit x 8bit
- X16 device(K9F2816X0C) : (8M + 256K)bit x 16bit
- Data Register
- X8 device(K9F2808X0C) :  (512 + 16)bit x 8bit
- X16 device(K9F2816X0C) : (256 + 8)bit x16bit
· Automatic Program and Erase
- Page Program
- X8 device(K9F2808X0C) :   (512 + 16)Byte
- X16 device(K9F2816X0C) : (256 + 8)Word
- Block Erase :
- X8 device(K9F2808X0C) :   (16K + 512)Byte
- X16 device(K9F2816X0C) : ( 8K + 256)Word
· Page Read Operation
- Page Size
- X8 device(K9F2808X0C) :   (512 + 16)Byte
- X16 device(K9F2816X0C) : (256 + 8)Word
- Random Access : 10ms(Max.)
- Serial Page Access : 50ns(Min.)
· Fast Write Cycle Time
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
· Command Register Operation
· Unique ID for Copyright Protection
· Package
- K9F28XXU0C-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F28XXU0C-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9F28XXX0C-DCB0/DIB0
63 - Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F28XXX0C-HCB0/HIB0
63 - Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
- K9F2808U0C-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F2808U0C-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
* K9F2808U0C-V/F(WSOPI ) is the same device as
K9F2808U0C-Y/P(TSOP1) except package type.


Pinout

Specifications

Parameter		Symbol	Rating		Unit
			K9F28XXQ0C(1.8V)	K9F28XXU0C(3.3V)
Voltage on any pin relative to VSS		VIN/OUT	-0.6 to + 2.45	-0.6 to + 4.6	V
		VCC	-0.2 to + 2.45	-0.6 to + 4.6
		VCCQ	-0.2 to + 2.45	-0.6 to + 4.6
Temperature Under Bias	K9F28XXX0C-XCB0	TBIAS	-10 to +125
	K9F28XXX0C-XIB0		-40 to +125
Storage Temperature	K9F28XXX0C-XCB0	TSTG	-65 to +150
	K9F28XXX0C-XIB0
Short Circuit Current		Ios	5		mA

NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is V_CC,+0.3V which, during transitions, may overshoot to V_CC+2.0V for periods <20ns.

2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

Offered in 16Mx8bit or 8Mx16bit, the K9F2816Q0C-DCB0 is 128M bit with spare 4M bit capacity. The K9F2816Q0C-DCB0 is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the writeintensive systems can take advantage of the K9F2816Q0C-DCB0's extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9F2816Q0C-DCB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.