K9F2808U0M-YIB0

NOTE
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.Maximum DC voltage on input/output pins is V_CC+0.3V which, during transitions, may overshoot to V_CC+2.0V for periods <20ns.

2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability

The K9F2808U0M-YIB0 is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200ms and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9F2808U0M-YIB0  extended reliability of 1,000,000 program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9F2808U0M-YIB0  is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility.