Features: • Voltage Supply : 2.7 ~ 3.6 V• Organization - Memory Cell Array -(16M + 512K)bit x 8bit -Data Register- (512 + 16)bit x 8bit• Automatic Program and Erase - Page Program -(512 + 16)Byte - Block Erase : - (16K + 512)Byte• Page Read Operation - Page Size - (512 + 16...
K9F2808U0C: Features: • Voltage Supply : 2.7 ~ 3.6 V• Organization - Memory Cell Array -(16M + 512K)bit x 8bit -Data Register- (512 + 16)bit x 8bit• Automatic Program and Erase - Page Program ...
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Features: *Voltage Supply - K9F2808Q0B : 1.7~1.9V - K9F2808U0B : 2.7 ~ 3.6 V *Organization - Memo...
Features: · Voltage Supply- 1.8V device(K9F28XXQ0C) :1.7~1.95V- 3.3V device(K9F28XXU0C) : 2.7 ~ 3....
Features: · Voltage Supply : 2.7V~3.6V· Organization - Memory Cell Array : (16M + 512K)bit x 8bit ...
• Voltage Supply : 2.7 ~ 3.6 V
• Organization
- Memory Cell Array
-(16M + 512K)bit x 8bit
- Data Register
- (512 + 16)bit x 8bit
• Automatic Program and Erase
- Page Program
-(512 + 16)Byte
- Block Erase :
- (16K + 512)Byte
• Page Read Operation
- Page Size
- (512 + 16)Byte
- Random Access : 10s(Max.)
- Serial Page Access : 50ns(Min.) 16M x 8 Bit NAND Flash Memory
• Fast Write Cycle Time
- Program time : 200s(Typ.)
- Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
• Command Register Operation
• Unique ID for Copyright Protection
• Package
- K9F2808U0C-YCB0/YIB0 48
- Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2808U0C-PCB0/PIB0 48
- Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9F2808U0C-VCB0/VIB0 48
- Pin WSOP I (12X17X0.7mm)
- K9F2808U0C-FCB0/FIB0 48
- Pin WSOP I (12X17X0.7mm) - Pb-free Package
- K9F2808U0C-V/F(WSOPI ) is the same device as K9F2808U0C-Y/P(TSOP1) except package type.
Parameter | Symbol | Rating | Unit | |
Voltage on any pin relative to VSS | VIN/OUT | -0.6 to + 4.6 | V | |
VCC | -0.6 to + 4.6 | |||
VCCQ | -0.6 to + 4.6 | |||
Temperature Under Bias | K9F2808U0C-XCB0 | TBIAS | -10 to +125 | °C |
K9F2808U0C-XIB0 | -40 to +125 | |||
Storage Temperature | K9F2808U0C-XCB0 | TSTG | -65 to +150 | °C |
K9F2808U0C-XIB0 | ||||
Short Circuit Current | Ios | 5 | mA |
Offered in 16Mx8bit , the K9F2808U0C is 128M bit with spare 4M bit capacity. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200s on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2808U0C's extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F2808U0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.