K9F2808U0B-Y

Features:

* Voltage Supply 
    - K9F2808Q0B : 1.7~1.9V
    - K9F2808U0B :  2.7 ~ 3.6 V
*Organization
  - Memory Cell Array : (16M + 512K)bit x 8bit
  - Data Register : (512 + 16)bit x8bit
*Automatic Program and Erase
  - Page Program : (512 + 16)Byte
  - Block Erase : (16K + 512)Byte
*528-Byte Page Read Operation
  - Random Access : 10ms(Max.)
  - Serial Page Access
     - K9F2808Q0B :  70ns
     - K9F2808U0B :  50ns
*Fast Write Cycle Time
  - Program Time
     - K9F2808Q0B :  300ms(Typ.)
     - K9F2808U0B :  200ms(Typ.)
  - Block Erase Time : 2ms(Typ.)
*Command/Address/Data Multiplexed I/O Port
*Hardware Data Protection
  - Program/Erase Lockout During Power Transitions
*Reliable CMOS Floating-Gate Technology
  - Endurance : 100K Program/Erase Cycles
  - Data Retention : 10 Years
*Command Register Operation Package
  - K9F2808U0B-YCB0/YIB0 :
    48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
  - K9F2808X0B-DCB0/DIB0
    63- Ball TBGA  ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
  - K9F2808U0B-VCB0/VIB0
    48 - Pin WSOP I (12X17X0.7mm)
      * K9F2808U0B-V(WSOPI )  is the same  device as 
         K9F2808U0B-Y(TSOP1)  except package type.


Pinout




Specifications

Parameter		Symbol	Rating		Unit
			K9F2808Q0B(1.8V)	K9F2808U0B(3.3V)
Voltage on any pin relative to VSS		VIN/OUT	-0.6 to + 2.45	-0.6 to + 4.6	V
		VCC	-0.2 to + 2.45	-0.6 to + 4.6	V
		VCCQ	-0.2 to + 2.45	-0.6 to + 4.6	V
Temperature Under Bias	K9F2808X0B-YCB0,DCB0	TBIAS	-10 to + 125
	K9F2808X0B-YIB0,DIB0		-40 to + 125
Storage Temperature		TSTG	-65 to + 150

Description

The K9F2808U0B-Y is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. The device is offered in 1.8V or 3.3V Vcc.  Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 200ms and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in a page can be read out at 70ns/50ns(K9F2808Q0B:70ns, K9F2808U0B:50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even  write-intensive systems can take advantage of the K9F2808X0B's extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.


The K9F2808U0B-Y is suitable for use in data memory of mobile communication system to reduce not only mount area but also power consumption.