PinoutDescriptionThe K9F1G08UOA-PCBO is a kind of 1G bit with spare 32M bit capacity and the NAND cell can provide the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200s on the 2112-byte page and an erase operation can be perf...
K9F1G08UOA-PCBO: PinoutDescriptionThe K9F1G08UOA-PCBO is a kind of 1G bit with spare 32M bit capacity and the NAND cell can provide the most cost-effective solution for the solid state mass storage market. A program...
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Features: · Voltage Supply- 2.65V device(K9F12XXD0A) : 2.4~2.9V- 3.3V device(K9F12XXU0A) : 2.7 ~ 3...
Features: · Voltage Supply- 1.8V device(K9F56XXQ0C) : 1.70~1.95V- 3.3V device(K9F56XXU0C) : 2.7 ~ ...
Features: · Voltage Supply- 1.8V device(K9F1208Q0B) : 1.70~1.95V- 2.65V device(K9F1208D0B) : 2.4~2...
The K9F1G08UOA-PCBO is a kind of 1G bit with spare 32M bit capacity and the NAND cell can provide the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200s on the 2112-byte page and an erase operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read out at 30ns(50ns with 1.8V device) cycle time per byte.
Features of the K9F1G08UOA-PCBO are:(1) fast write cycle time;(2) automatic program and erase;(3) unique ID for copyright protection;(4) inteligent copy-back with internal 1 bit/528 byte;(5) command register operation;(6) hardware data protection;(7) reliable CMOS floating-gate technology.
The absolute maximum ratings of the K9F1G08UOA-PCBO can be summarized as:(1): voltage on any pin relative to VSS is -0.6 V to +4.6 V(Vcc,Vin,Vout) or is -0.6 V to +4.6(Vcc);(2): short circuit current(IOS) is 5 mA;(3): temperature under bias(Tbias) is -10 to +125;(4): storage temperature(Tstg) is -40 to +125.