Features: • Voltage Supply- 3.3V Device(K9F1G08U0B) : 2.70V ~ 3.60V• Organization- Memory Cell Array : (128M + 4M) x 8bit- Data Register : (2K + 64) x 8bit• Automatic Program and Erase- Page Program : (2K + 64)Byte- Block Erase : (128K + 4K)Byte• Page Read Operation- Page S...
K9F1G08U0B-P: Features: • Voltage Supply- 3.3V Device(K9F1G08U0B) : 2.70V ~ 3.60V• Organization- Memory Cell Array : (128M + 4M) x 8bit- Data Register : (2K + 64) x 8bit• Automatic Program and E...
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Features: · Voltage Supply- 2.65V device(K9F12XXD0A) : 2.4~2.9V- 3.3V device(K9F12XXU0A) : 2.7 ~ 3...
Features: · Voltage Supply- 1.8V device(K9F56XXQ0C) : 1.70~1.95V- 3.3V device(K9F56XXU0C) : 2.7 ~ ...
Features: · Voltage Supply- 1.8V device(K9F1208Q0B) : 1.70~1.95V- 2.65V device(K9F1208D0B) : 2.4~2...
Parameter | Symbol | Rating | Unit | ||
1.8V | 3.3V | ||||
Voltage on any pin relative to VSS | VCC | -0.6 to +2.45 | -0.6 to +4.6 | V | |
VIN | -0.6 to +2.45 | -0.6 to +4.6 | |||
VI/O | -0.6 to Vcc + 0.3 (< 2.45V) | -0.6 to Vcc + 0.3 (< 4.6V) | |||
Temperature Under Bias |
K9F2G08X0A-XCB0 | TBIAS | -10 to +125 | °C | |
K9F2G08X0A-XIB0 | -40 to +125 | ||||
Storage Temperature | K9F2G08X0A-XCB0 | TSTG | -65 to +150 | °C | |
K9F2G08X0A-XIB0 | |||||
Short Circuit Current | IOS | 5 | mA |
Offered in 128Mx8bit, the K9F1G08U0B-P is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1G08U0B-P s extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08U0B-P is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.