DescriptionThe K9F1G08R0A-J is designed as 128M x 8bit NAND flash memory which is 1Gbit with spare 32Mbit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200s on the 2112-byte page and an era...
K9F1G08R0A-J: DescriptionThe K9F1G08R0A-J is designed as 128M x 8bit NAND flash memory which is 1Gbit with spare 32Mbit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass s...
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Features: · Voltage Supply- 2.65V device(K9F12XXD0A) : 2.4~2.9V- 3.3V device(K9F12XXU0A) : 2.7 ~ 3...
Features: · Voltage Supply- 1.8V device(K9F56XXQ0C) : 1.70~1.95V- 3.3V device(K9F56XXU0C) : 2.7 ~ ...
Features: · Voltage Supply- 1.8V device(K9F1208Q0B) : 1.70~1.95V- 2.65V device(K9F1208D0B) : 2.4~2...
The K9F1G08R0A-J is designed as 128M x 8bit NAND flash memory which is 1Gbit with spare 32Mbit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200s on the 2112-byte page and an erase operation can be performed in typical 2ms on a 128K-byte block.
The K9F1G08R0A-J has many features. (1)Voltage supply is 1.65V to 1.95V. (2)Its organization means memory cell array: (128M+4096K)bit x 8bit and data register: (2K+64)bit x8bit and cache register: (2K+64)bit x8bit. (3)Automatic program and erase means page program: (2K+64)byte and block erase: (128K+4K) byte. (4)Page read operation means 2kbyte for page size and 25us max for random read and 50ns for serial access. (5)Fast write cycle time is 200us typ for program time and 2ms for block erase time. (6)Command/ address/ data multiplexed I/O port. (7)Hardware data protection which means program/ erase lockout during power transitions. (8)Reliable CMOS floating-gate technology which means 100K program/erase cycles for endurance and 10 years for data retention. (9)Command register operation. (10)Catch program operation for high performance program. (11)Intelligent copy-back operation. And so on.
Some absolute maximum ratings of K9F1G08R0A-J have been concluded into several points as follow. (1)Its voltage on any pin relative to Vss would be from -0.6V to +2.45V for input voltage and output voltage and would be from -0.2V to +2.45V for Vcc. (2)Its temperature under bias would be from -10°C to +125°C. (3)Its storage temperature range would be from -65°C to +150°C. (4)Its short circuit current would be 5mA. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some DC characteristics of K9F1G08R0A-J are concluded as follow. (1)Its operating current would be typ 10mA and max 20mA. (2)Its standby current TTL would be max 1mA. (3)Its standby current CMOS would be typ 10uA and max 50uA. And so on. If you have any question or suggestion or want to know more information about K9F1G08R0A-J please contact us for details. Thank you!