K9F1608W0A-TCB0

Features: · Voltage Supply : 2.7V ~ 5.5V· Organization - Memory Cell Array : (2M + 64K)bit x 8bit - Data Register : (256 + 8)bit x8bit· Automatic Program and Erase - Page Program : (256 + 8)Byte - Block Erase : (4K + 128)Byte - Status Register· 264-Byte Page Read Operation -Random Access : 10ms(Ma...

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K9F1608W0A-TCB0 Picture
SeekIC No. : 004383373 Detail

K9F1608W0A-TCB0: Features: · Voltage Supply : 2.7V ~ 5.5V· Organization - Memory Cell Array : (2M + 64K)bit x 8bit - Data Register : (256 + 8)bit x8bit· Automatic Program and Erase - Page Program : (256 + 8)Byte - B...

floor Price/Ceiling Price

Part Number:
K9F1608W0A-TCB0
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

· Voltage Supply : 2.7V ~ 5.5V
· Organization
   - Memory Cell Array : (2M + 64K)bit x 8bit
   -    Data Register : (256 + 8)bit x8bit
· Automatic Program and Erase
   - Page Program : (256 + 8)Byte
   - Block Erase : (4K + 128)Byte
   - Status Register
· 264-Byte Page Read Operation
   - Random Access : 10ms(Max.)
   - Serial Page Access : 80ns(Min.)
· Fast Write Cycle Time
   - Program time : 250ms(typ.)
   - Block Erase time : 2ms (typ.)
· Command/Address/Data Multiplexed I/O port
· Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
   - Endurance : 1M Program/Erase Cycles
   - Data Retention : 10 years
· Command Register Operation
· 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
   - Forward Type



Pinout

  Connection Diagram


Specifications

Parameter Symbol Rating Unit
Voltage on any pin relative to VSS VIN -0.6 to +7.0 V
Temperature Under Bias K9F1608W0A-TCB0 TBIAS -10 to +125 °C
K9F1608W0A-TIB0 -40 to +125
Storage Temperature TSTG -65 to +150 °C
Short Circuit Output Current IOS 5 mA



Description

 

The K9F1608W0A is a 2M(2,097,152)x8bit NAND Flash Memory with a spare 64K(65,536)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250ms and an erase operation can be performed in typically 2ms on a 4K-byte block.

Data in the page can be read out at 80ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase system functions, including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9F1608W0A extended reliability of 1,000,000 program/erase cycles by providing either ECC(Error Correction Code) or real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications and also the spare 8bytes of a page combined with the other 256 bytes can be utilized by system-level ECC.

The K9F1608W0A is an optimum solution for large nonvolatile storage application such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility.




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