PinoutDescriptionThe K9F1208UOM-YIBO is a type of 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit and the NAND cell offers the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page...
K9F1208UOM-YIBO: PinoutDescriptionThe K9F1208UOM-YIBO is a type of 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit and the NAND cell offers the most cost-effective solution for the solid s...
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Features: · Voltage Supply- 2.65V device(K9F12XXD0A) : 2.4~2.9V- 3.3V device(K9F12XXU0A) : 2.7 ~ 3...
Features: · Voltage Supply- 1.8V device(K9F56XXQ0C) : 1.70~1.95V- 3.3V device(K9F56XXU0C) : 2.7 ~ ...
Features: · Voltage Supply- 1.8V device(K9F1208Q0B) : 1.70~1.95V- 2.65V device(K9F1208D0B) : 2.4~2...
The K9F1208UOM-YIBO is a type of 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit and the NAND cell offers the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block.
Features of the K9F1208UOM-YIBO are:(1) fast write cycle time;(2) automatic program and erase;(3) unique ID for copyright protection;(4) inteligent copy-back with internal 1 bit/528 byte;(5) command register operation;(6) hardware data protection;(7) reliable CMOS floating-gate technology.
The absolute maximum ratings of the K9F1208UOM-YIBO can be summarized as:(1): voltage on any pin relative to VSS is -0.6 V to +4.6 V(Vcc,Vin);(2): storage temperature(Tstg) is -65 to +125;(3): temperature under bias(Tbias) is -40 to +125.