K814W

The K814W consist of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes (reversed polarity) in an 4-lead plastic dual inline package. The features of K814W  are as follows:(1)endstackable to 2.54 mm (0.1") spacing; (2)K814PW version suitable for Surface Mount Technology (SMD); (3)DC isolation test voltage VIO = 2.5 kV; (4)low coupling capacitance of typical 0.3 pF; (5)Current Transfer Ratio (CTR) of typical 100%; (6)low temperature coefficient of CTR; (7)wide ambient temperature range; (8)Underwriters Laboratory (UL) recognized-file No. E 76222 *.

What comes next is about the maximum ratings of K814W : (1)reverse voltage: 6 V; (2)forward current: ±60 mA; (3)forward surge current: ±1.5 A; (4)power dissipation Tamb: 100 mW; (5)junction temperature: 125 °C; (6)collector emitter voltage: 70 V; (7)emitter collector voltage: 7 V; (8)collector current: 50 mA; (9)peak collector current: 100 mA; (10)power dissipation: 150 mW; (11)junction temperature: 125 °C.

The following is about the electrical characteristics of K814W :(1)forward voltage: 1.25V typical and 1.6 V max at IF =±50 mA; (2)reverse current: 10A at  VR = ±6 V; (3)collector emitter voltage: 70 V min at IC = 100A ; (4)emitter collector voltage: 7 V min at IE = 100A ; (5)collector dark current: 100 nA max at VCE = 20 V, IF = 0, E = 0; (6)DC isolation test voltage: 2.5 kV min at t = 2 s ; (7)IC/IF: 0.2 min and 3.0 max at IF = ±5 mA, VCE = 5 V; (8)collector emitter saturation voltage: 0.3 V max at IF = ±10 mA,  IC = 1 mA; (9)cut-off frequency: 100 kHz typical at IF = ±10 mA, VCE = 5 V, RL = 100; (10)coupling capacitance: 0.3 pF typical at f = 1 MHz.