Transistor Output Optocouplers Phototransistor Out Single CTR >20%
K814P: Transistor Output Optocouplers Phototransistor Out Single CTR >20%
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Input Type : | AC | Maximum Collector Emitter Voltage : | 70 V | ||
Maximum Collector Emitter Saturation Voltage : | 0.3 V | Isolation Voltage : | 5000 Vrms | ||
Current Transfer Ratio : | 300 % | Maximum Forward Diode Voltage : | 1.6 V | ||
Maximum Collector Current : | 50 mA | Maximum Power Dissipation : | 250 mW | ||
Maximum Operating Temperature : | + 100 C | Minimum Operating Temperature : | - 40 C | ||
Package / Case : | PDIP-4 | Packaging : | Tube |
Parameter | Test Conditions | Symbol | Value | Unit |
Reverse voltage | VR | 6 | V | |
Forward current | IF | 60 | mA | |
Forward surge current | tp 10 s | IFSM | 1.5 | A |
Power dissipation | Tamb 25 | PV | 100 | mW |
Junction temperature | Tj | 125 |
Parameter | Test Conditions | Symbol | Value | Unit |
Collector emitter voltage | VCEO | 70 | V | |
Emitter collector voltage | VECO | 7 | V | |
Collector current | IC | 50 | mA | |
Peak collector current | tp/T = 0.5, tp 10 ms | ICM | 100 | mA |
Power dissipation | Tamb 25 | PV | 150 | mW |
Junction temperature | Tj | 125 |
Coupler
Parameter Test | Conditions | Symbol | Value | Unit |
AC Isolation test voltage (RMS) | t = 1 min, f = 50 Hz | VIO1) | 5 | kV |
Total power dissipation | Tamb 25 | Ptot | 250 | mW |
Operating ambient temperature range |
Tamb | 40 to +100 | ||
Storage temperature range | Tstg | 55 to +125 | ||
Soldering temperature | 2 mm from case, t 10 s | Tsd | 260 |
The K814P/ K824P/ K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes (reversed polarity) in an 4-lead up to 16-lead plastic dual inline package.
The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.