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K6X8016C3B-Q

Features: · Process Technology: Full CMOS· Organization: 512K x16· Power Supply Voltage: 4.5~5.5V· Low Data Retention Voltage: 2.0V(Min)· Three state output and TTL Compatible· Package Type: 44-TSOP2-400FPinoutSpecifications Item Symbol Ratings Unit Remark Voltage on any pin relati...

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SeekIC No. : 004383248 Detail

K6X8016C3B-Q: Features: · Process Technology: Full CMOS· Organization: 512K x16· Power Supply Voltage: 4.5~5.5V· Low Data Retention Voltage: 2.0V(Min)· Three state output and TTL Compatible· Package Type: 44-TSOP...

K6X8016C3B-Q Data Sheet

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Part Number:
K6X8016C3B-Q
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

· Process Technology: Full CMOS
· Organization: 512K x16
· Power Supply Voltage: 4.5~5.5V
· Low Data Retention Voltage: 2.0V(Min)
· Three state output and TTL Compatible
· Package Type: 44-TSOP2-400F


Pinout

Connection Diagram


Specifications

Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.5 to VCC+0.5V(max. 7.0V) V -
Voltage on Vcc supply relative to Vss VCC -0.3 to 7.0 V -
Power Dissipation PD 1.0 W -
Storage temperature TSTG -65 to 150 °C -
Operating Temperature TA 0 to 70 °C K6X8016C3B-B

-40 to 85

°C

K6X8016C3B-F

-40 to 125

°C

 K6X8016C3B-Q

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The K6X8016C3B-Q families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The K6X8016C3B-Q families support various operating temperature range for user flexibility of system design. The K6X8016C3B-Q families also support low data retention voltage for battery back-up operation with low data retention current.




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