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K6X8008C2B

Features: · Process Technology: Full CMOS· Organization: 1M x8· Power Supply Voltage: 4.5~5.5V· Low Data Retention Voltage: 2.0V(Min)· Three state output and TTL Compatible· Package Type: 44-TSOP2-400FPinoutSpecifications Item Symbol Ratings Unit Remark Voltage on any pin...

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SeekIC No. : 004383245 Detail

K6X8008C2B: Features: · Process Technology: Full CMOS· Organization: 1M x8· Power Supply Voltage: 4.5~5.5V· Low Data Retention Voltage: 2.0V(Min)· Three state output and TTL Compatible· Package Type: 44-TSOP2-4...

K6X8008C2B Data Sheet

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Part Number:
K6X8008C2B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Process Technology: Full CMOS
· Organization: 1M x8
· Power Supply Voltage: 4.5~5.5V
· Low Data Retention Voltage: 2.0V(Min)
· Three state output and TTL Compatible
· Package Type: 44-TSOP2-400F


Pinout

Connection Diagram


Specifications

Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
VIN, VOUT
-0.5 to VCC+0.5V(max.7.0V)
V
-
Voltage on Vcc supply relative to Vss
VCC
-0.3 to 7.0 V
V
-
Power Dissipation
PD
1.0
W
-
Storage temperature
TSTG
-65 to 150
°C
-
Operating Temperature
TA
0 to 70
°C
K6X8008C2B-B
-40 to 185
°C
K6X8008C2B-F
-40 to 125
°C
K6X8008C2B-Q

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The K6X8008C2B families support various operating temperature range for user flexibility of system design. The K6X8008C2B families also support low data retention voltage for battery back-up operation with low data retention
current.




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