DescriptionThe K6R1016V1C-TC15 is one member of the K6R1016V1C family which is designed as the 512Kx8 bit low power full CMOS static RAM. This device is fabricated by SAMSUNG's advanced full CMOS process technology. Also this device supports various operating temperature range and various package ...
K6R1016V1C-TC15: DescriptionThe K6R1016V1C-TC15 is one member of the K6R1016V1C family which is designed as the 512Kx8 bit low power full CMOS static RAM. This device is fabricated by SAMSUNG's advanced full CMOS pr...
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Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) ...
Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) ...
Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) ...
The K6R1016V1C-TC15 is one member of the K6R1016V1C family which is designed as the 512Kx8 bit low power full CMOS static RAM. This device is fabricated by SAMSUNG's advanced full CMOS process technology. Also this device supports various operating temperature range and various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
Features of the K6R1016V1C-TC15 are:(1)Process Technology: Full CMOS;(2)Organization: 512Kx8;(3)Power Supply Voltage: 4.5 to 5.5V;(4)Low Data Retention Voltage: 2V(Min);(5)Three state output and TTL compatible;(6)Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R.
The absolute maximum ratings of the K6R1016V1C-TC15 can be summarized as:(1)Voltage on any pin relative to Vss: -0.5 to Vcc+0.5 V (max. 7.0 V) V;(2)Voltage on Vcc supply relative to Vss: -0.3 to 7.0 V;(3)Power Dissipation: 1.0 W;(4)Storage temperature: -65 to 150 . If you want to know more information such as the electrical characteristics about the K6R1016V1C-TC15, please download the datasheet in www.seekic.com or www.chinaicmart.com.