Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) : 30mA(Max.) CMOS) : 5mA(Max.) 0.5mA(Max.) L-Ver. only Operating K6R1004C1C-10 : 75mA(Max.) K6R1004C1C-12 : 70mA(Max.) K6R1004C1C-15 : 68mA(Max.) K6R1004C1C-20 : 65mA(Max.)• Single 5.0V±10% Powe...
K6R1004C1C-C: Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) : 30mA(Max.) CMOS) : 5mA(Max.) 0.5mA(Max.) L-Ver. only Operating K6R1004C1C-10 : 75mA(Max.) K6R1004C...
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Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) ...
Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) ...
Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) ...
Item | Symbol | Ratings | Unit | |
Voltage on any pin relative to Vss | VIN,VOUT | -0.5 to Vcc+0.5V | V | |
Voltage on Vcc supply relative to Vss | VCC | -0.5 to 7.0 | V | |
Power Dissipation | PD | 1 | W | |
Storage temperature | TSTG | -65 to 150 | °C | |
Operating Temperature | Commercial | TA | 0 to 70 | °C |
Industrial | TA | -40 to 85 | °C |
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The K6R1004C1C-C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C-C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The K6R1004C1C-C is fabricated using SAMSUNG 's advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1004C1C-C is packaged in a 400 mil 32-pin plastic SOJ.