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K6R1016V1C-I

Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 5mA(Max.) 0.5mA(Max.) L-ver. only Operating * K6R1016V1C-10: 105mA(Max.) K6R1016V1C-12: 95mA(Max.) K6R1016V1C-15: 93mA(Max.)K6R1016V1C-20: 90mA(Max.)• Single 3.3V Power Sup...

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SeekIC No. : 004383182 Detail

K6R1016V1C-I: Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 5mA(Max.) 0.5mA(Max.) L-ver. only Operating * K6R1016V1C-10: 105mA(Max.) K6R10...

K6R1016V1C-I Data Sheet

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Part Number:
K6R1016V1C-I
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Fast Access Time 10,12,15,20ns(Max.)
• Low Power Dissipation
   Standby (TTL) : 30mA(Max.)
                 (CMOS) : 5mA(Max.)
                                0.5mA(Max.) L-ver. only
   Operating * K6R1016V1C-10: 105mA(Max.)
                       K6R1016V1C-12: 95mA(Max.)
                       K6R1016V1C-15: 93mA(Max.)
                       K6R1016V1C-20: 90mA(Max.)
• Single 3.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
   - No Clock or Refresh required
• Three State Outputs
• 2V Minimum Data Retention: L-ver. only
• Center Power/Ground Pin Configuration
• Data Byte Control: LB: I/O1~ I/O8, UB: I/O9~ I/O16
• Standard Pin Configuration:
                   K6R1016V1C-J: 44-SOJ-400
                   K6R1016V1C-T: 44-TSOP2-400BF
                   K6R1016V1C-F: 48-Fine pitch BGA with 0.75 Ball pitch


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
-0.5 to 4.6
V
Voltage on VCC Supply Relative to VSS
VCC
-0.5 to 4.6
V
Power Dissipation
Pd
1
W
Storage Temperature
TSTG
65 to 150
Operating Temperature
Commercial
TA
0 to 70
Industrial
TA
-40 to 85

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent  damage
   to the device. This is a stress rating only and functional operation of the device at these  or any other
   conditions above those indicated in the operating sections of this specification is not implied. Exposure to
   absolute maximum rating conditions for extended periods may affect reliability.




Description

The K6R1016V1C-I is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1C-I uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The K6R1016V1C-I is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1016V1C-I is packaged in a 400mil 44-pin plastic SOJ or TSOP2 forward or 48-Fine pitch BGA.




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