K6R1016V1C-C10

Features:

• Fast Access Time 10,12,15,20ns(Max.)
• Low Power Dissipation
Standby (TTL) : 30mA(Max.)
(CMOS) : 5mA(Max.)
0.5mA(Max.) L-ver. only
Operating * K6R1016V1C-10: 105mA(Max.)
                   K6R1016V1C-12: 95mA(Max.)
                   K6R1016V1C-15: 93mA(Max.)
                   K6R1016V1C-20: 90mA(Max.)
• Single 3.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• 2V Minimum Data Retention: L-ver. only
• Center Power/Ground Pin Configuration
• Data Byte Control: LB: I/O1~ I/O8, UB: I/O9~ I/O16
• Standard Pin Configuration:
                      K6R1016V1C-J: 44-SOJ-400
                      K6R1016V1C-T: 44-TSOP2-400BF
                     K6R1016V1C-F: 48-Fine pitch BGA with 0.75 Ball pitch


Pinout




Specifications

Parameter		Symbol	Rating	Unit
Voltage on Any Pin Relative to Vss		VIN, VOUT	-0.5 to 4.6	V
Voltage on Vcc Supply Relative to Vss		Vcc	-0.5 to 4.6	V
Power Dissipation		Pd	1	W
Storage Temperature		TSTG	-65 to 150
Operating Temperature	Commercial	TA	0 to 70
	Industrial	TA	-40 to 85

Description

The K6R1016V1C-C10 is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1C-C10 uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The K6R1016V1C-C10 is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1016V1C-C10 is packaged in a 400mil 44-pin plastic SOJ or TSOP2 forward or 48-Fine pitch BGA.