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K6R1008C1B-C

Features: • Fast Access Time 8,10,12ns(Max.)• Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating K6R1008C1B-8 : 160mA(Max.) K6R1008C1B-10 : 155mA(Max.) K6R1008C1B-12 : 150mA(Max.)• Single 5.0V ±10% Power Supply• TTL Compatible Inputs and Outputs&...

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SeekIC No. : 004383168 Detail

K6R1008C1B-C: Features: • Fast Access Time 8,10,12ns(Max.)• Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating K6R1008C1B-8 : 160mA(Max.) K6R1008C1B-10 : 155mA(Max.) K6R100...

K6R1008C1B-C Data Sheet

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Part Number:
K6R1008C1B-C
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Fast Access Time 8,10,12ns(Max.)
• Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating K6R1008C1B-8 : 160mA(Max.)
   K6R1008C1B-10 : 155mA(Max.)
   K6R1008C1B-12 : 150mA(Max.)
• Single 5.0V ±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration K6R1008C1B-J : 32-SOJ-400 K6R1008C1B-T: 32-TSOP2-400CF


Pinout

Connection Diagram


Specifications

Item Symbol Ratings Unit
Voltage on any pin relative to Vss VIN,VOUT -0.5 to 7.0 V
Voltage on Vcc supply relative to Vss VCC -0.5 to 7.0 V
Power Dissipation PD

1.0

 W
Storage temperature TSTG -65 to 150 °C
Operating Temperature Commercial TA 0 to 70 °C
Industrial TA -40 to 85 °C

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The K6R1008C1B-C is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008C1B-C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The K6R1008C1B-C is fabricated using SAMSUNG's advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1008C1B-C is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward.




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