Features: • Fast Access Time 12, 15, 20ns(Max.)• Low Power Dissipation Standby (TTL) : 25mA(Max.) (CMOS) : 8mA(Max.) Operating K6R1008C1A-12 : 170mA(Max.) K6R1008C1A-15 : 165mA(Max.) K6R1008C1A-20 : 160mA(Max.)• Single 5.0V±10% Power Supply• TTL Compatible Inputs and Output...
K6R1008C1A-C: Features: • Fast Access Time 12, 15, 20ns(Max.)• Low Power Dissipation Standby (TTL) : 25mA(Max.) (CMOS) : 8mA(Max.) Operating K6R1008C1A-12 : 170mA(Max.) K6R1008C1A-15 : 165mA(Max.) K6R...
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Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) ...
Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) ...
Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) ...
Item | Symbol | Ratings | Unit | |
Voltage on any pin relative to Vss | VIN,VOUT | -0.5 to 7.0 | V | |
Voltage on Vcc supply relative to Vss | VCC | -0.5 to 7.0 | V | |
Power Dissipation | PD | 1 | W | |
Storage temperature | TSTG | -65 to 150 | °C | |
Operating Temperature | Commercial | TA | 0 to 70 | °C |
Industrial | TA | -40 to 85 | °C |
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The K6R1008C1A-C is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008C1A-C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The K6R1008C1A-C is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1008C1A-C is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward.