Features: · Process Technology: Full CMOS· Organization: 512K x16· Power Supply Voltage: 3.0~3.6V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 44-TSOP2-400F/RPinoutSpecifications Item Symbol Ratings Unit Voltage on any pin relative to Vss VIN,VOUT -0.2 to...
K6F8016V3A: Features: · Process Technology: Full CMOS· Organization: 512K x16· Power Supply Voltage: 3.0~3.6V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 44-TSOP2-400F/RPinoutSpec...
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Features: · Process Technology: Full CMOS· Organization: 512K x16· Power Supply Voltage: 1.65~2.2V...
Features: • Process Technology: Full CMOS• Organization: 512K x16• Power Supply ...
Features: · Process Technology: Full CMOS· Organization: 512K x16· Power Supply Voltage: 2.7~3.6V·...
Item | Symbol | Ratings | Unit |
Voltage on any pin relative to Vss | VIN,VOUT | -0.2 to VCC+0.3V(Max.4.2V) | V |
Voltage on Vcc supply relative to Vss | VCC | -0.2 to 4.0 | V |
Power Dissipation | PD | 1.0 | W |
Storage temperature | TSTG | -65 to 150 | °C |
Operating Temperature | TA | -40 to 85 | °C |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The K6F8016V3A families are fabricated by SAMSUNG's advanced full CMOS process technology. The families support various operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data retention current.