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K6F8016R6D

Features: • Process Technology: Full CMOS• Organization: 512K x16• Power Supply Voltage: 1.65~1.95V• Low Data Retention Voltage: 1.0V(Min)• Three State Outputs• Package Type: 48-FBGA-6.00x7.00Specifications Item Symbol Ratings Unit Voltage on any pin ...

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SeekIC No. : 004383149 Detail

K6F8016R6D: Features: • Process Technology: Full CMOS• Organization: 512K x16• Power Supply Voltage: 1.65~1.95V• Low Data Retention Voltage: 1.0V(Min)• Three State Outputs• P...

K6F8016R6D Data Sheet

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Part Number:
K6F8016R6D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Process Technology: Full CMOS
• Organization: 512K x16
• Power Supply Voltage: 1.65~1.95V
• Low Data Retention Voltage: 1.0V(Min)
• Three State Outputs
• Package Type: 48-FBGA-6.00x7.00


Specifications

Item Symbol Ratings Unit
Voltage on any pin relative to Vss VIN,VOUT -0.2 to VCC+0.3V(Max.2.5V) V
Voltage on Vcc supply relative to Vss VCC -0.2 to 2.5 V
Power Dissipation PD 1.0 W
Storage temperature TSTG -65 to 150 °C
Operating Temperature TA -40 to 85 °C

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions for extended period may affect reliability.




Description

The K6F8016R6D families are fabricated by SAMSUNGs advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.




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