Features: · Process Technology: Full CMOS· Organization: 128K x16 bit· Power Supply Voltage: 3.0~3.6V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 48-TBGA-6.00x7.00Specifications Item Symbol Ratings Unit Voltage on any pin relative to Vss VIN,VOUT -0.2 to...
K6F2016V4E: Features: · Process Technology: Full CMOS· Organization: 128K x16 bit· Power Supply Voltage: 3.0~3.6V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 48-TBGA-6.00x7.00Spec...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Process Technology: Full CMOS• Organization: 256Kx8• Power Supply Vo...
Features: • Process Technology: Full CMOS• Organization: 256Kx8• Power Supply Vo...
Features: • Process Technology: Full CMOS• Organization: 256Kx8• Power Supply Vo...
Item | Symbol | Ratings | Unit |
Voltage on any pin relative to Vss | VIN,VOUT | -0.2 to VCC+0.3V | V |
Voltage on Vcc supply relative to Vss | VCC | -0.2 to 4.0V | V |
Power Dissipation | PD | 1.0 | W |
Storage temperature | TSTG | -65 to 150 | °C |
Operating Temperature | TA | -40 to 85 | °C |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions longer than 1seconds may affect reliability.
The K6F2016V4E families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.