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K6F2016V4E

Features: · Process Technology: Full CMOS· Organization: 128K x16 bit· Power Supply Voltage: 3.0~3.6V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 48-TBGA-6.00x7.00Specifications Item Symbol Ratings Unit Voltage on any pin relative to Vss VIN,VOUT -0.2 to...

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SeekIC No. : 004383140 Detail

K6F2016V4E: Features: · Process Technology: Full CMOS· Organization: 128K x16 bit· Power Supply Voltage: 3.0~3.6V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 48-TBGA-6.00x7.00Spec...

K6F2016V4E Data Sheet

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Part Number:
K6F2016V4E
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Process Technology: Full CMOS
· Organization: 128K x16 bit
· Power Supply Voltage: 3.0~3.6V
· Low Data Retention Voltage: 1.5V(Min)
· Three State Outputs
· Package Type: 48-TBGA-6.00x7.00


Specifications

Item Symbol Ratings Unit
Voltage on any pin relative to Vss VIN,VOUT -0.2 to VCC+0.3V V
Voltage on Vcc supply relative to Vss VCC -0.2 to 4.0V V
Power Dissipation PD 1.0 W
Storage temperature TSTG -65 to 150 °C
Operating Temperature TA -40 to 85 °C

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions longer than 1seconds may affect reliability.




Description

The K6F2016V4E families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.




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