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K6F2016U4E

Features: · Process Technology: Full CMOS· Organization: 128K x16 bit· Power Supply Voltage: 2.7~3.3V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 48-TBGA-6.00x7.00PinoutSpecifications Item Symbol Ratings Unit Voltage on any pin relative to Vss ...

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SeekIC No. : 004383139 Detail

K6F2016U4E: Features: · Process Technology: Full CMOS· Organization: 128K x16 bit· Power Supply Voltage: 2.7~3.3V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 48-TBGA-6.00x7.00Pino...

K6F2016U4E Data Sheet

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Part Number:
K6F2016U4E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Process Technology: Full CMOS
· Organization: 128K x16 bit
· Power Supply Voltage: 2.7~3.3V
· Low Data Retention Voltage: 1.5V(Min)
· Three State Outputs
· Package Type: 48-TBGA-6.00x7.00


Pinout

Connection Diagram


Specifications

Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.2 to VCC+0.3V
V
Voltage on Vcc supply relative to Vss
VCC
-0.2 to 3.6V
V
Power Dissipation
PD
1.0
W
Storage temperature
TSTG
-65 to 150
°C
Operating Temperature
TA
-40 to 85
°C



Description

The K6F2016U4E families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.




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